MMST4403-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMST4403-7-F Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-600mA
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMST4403
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-750mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Turn Off Time-Max (toff)
255ns
Height
1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.037601
$0.037601
500
$0.027648
$13.824
1000
$0.023040
$23.04
2000
$0.021138
$42.276
5000
$0.019755
$98.775
10000
$0.018377
$183.77
15000
$0.017772
$266.58
50000
$0.017475
$873.75
MMST4403-7-F Product Details
MMST4403-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of -750mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).The part has a transition frequency of 200MHz.Input voltage breakdown is available at 40V volts.A maximum collector current of 600mA volts is possible.
MMST4403-7-F Features
the DC current gain for this device is 100 @ 150mA 2V a collector emitter saturation voltage of -750mV the vce saturation(Max) is 750mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is -600mA a transition frequency of 200MHz
MMST4403-7-F Applications
There are a lot of Diodes Incorporated MMST4403-7-F applications of single BJT transistors.