MMSTA55-7-F Overview

In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of -4V can achieve high levels of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.A maximum collector current of 500mA volts can be achieved.

MMSTA55-7-F Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz

MMSTA55-7-F Applications

There are a lot of Diodes Incorporated MMSTA55-7-F applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface