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2N6490G

2N6490G

2N6490G

ON Semiconductor

2N6490G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6490G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation1.8W
Peak Reflow Temperature (Cel) 260
Current Rating15A
Frequency 5MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6490
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.8W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product5MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
Collector Emitter Breakdown Voltage100V
Transition Frequency 5MHz
Collector Emitter Saturation Voltage3.5V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6804 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.667760$4.66776
10$4.403547$44.03547
100$4.154290$415.429
500$3.919141$1959.5705
1000$3.697303$3697.303

2N6490G Product Details

2N6490G Overview


This device has a DC current gain of 20 @ 5A 4V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 3.5V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 5A, 15A.With the emitter base voltage set at 5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 5MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 60V volts.A maximum collector current of 15A volts is possible.

2N6490G Features


the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz

2N6490G Applications


There are a lot of ON Semiconductor 2N6490G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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