ZTX415STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX415STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Box (TB)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
HTS Code
8541.21.00.95
Voltage - Rated DC
100V
Max Power Dissipation
680mW
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX415
Pin Count
3
Reference Standard
CECC
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
40MHz
Transistor Type
NPN - Avalanche Mode
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
100V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
260V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$8.19200
$16.384
ZTX415STZ Product Details
ZTX415STZ Overview
This device has a DC current gain of 25 @ 10mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Parts of this part have transition frequencies of 40MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
ZTX415STZ Features
the DC current gain for this device is 25 @ 10mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 1mA, 10mA the emitter base voltage is kept at 6V the current rating of this device is 500mA a transition frequency of 40MHz
ZTX415STZ Applications
There are a lot of Diodes Incorporated ZTX415STZ applications of single BJT transistors.