KSB1116AGBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSB1116AGBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
750mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Transition Frequency
120MHz
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.04000
$0.04
500
$0.0396
$19.8
1000
$0.0392
$39.2
1500
$0.0388
$58.2
2000
$0.0384
$76.8
2500
$0.038
$95
KSB1116AGBU Product Details
KSB1116AGBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As you can see, the part has a transition frequency of 120MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
KSB1116AGBU Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 300mV @ 50mA, 1A a transition frequency of 120MHz
KSB1116AGBU Applications
There are a lot of Rochester Electronics, LLC KSB1116AGBU applications of single BJT transistors.