2N1480 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N1480 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 200mA 4V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.4V @ 20mA, 200mA
Voltage - Collector Emitter Breakdown (Max)
55V
Current - Collector (Ic) (Max)
1.5A
Frequency - Transition
1.5MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.410000
$3.41
10
$3.216981
$32.16981
100
$3.034888
$303.4888
500
$2.863102
$1431.551
1000
$2.701039
$2701.039
2N1480 PBFREE Product Details
2N1480 PBFREE Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 200mA 4V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.4V @ 20mA, 200mA.Single BJT transistor shows a 55V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N1480 PBFREE Features
the DC current gain for this device is 20 @ 200mA 4V the vce saturation(Max) is 1.4V @ 20mA, 200mA
2N1480 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N1480 PBFREE applications of single BJT transistors.