ZTX451STZ Overview

DC current gain in this device equals 50 @ 150mA 10V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 350mV allows maximum design flexibility.A VCE saturation (Max) of 350mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.There is a transition frequency of 150MHz in the part.Maximum collector currents can be below 1A volts.

ZTX451STZ Features

the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz

ZTX451STZ Applications

There are a lot of Diodes Incorporated ZTX451STZ applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface