ZTX658STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX658STZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
HTS Code
8541.29.00.75
Voltage - Rated DC
400V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX658
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.315202
$0.315202
10
$0.297360
$2.9736
100
$0.280528
$28.0528
500
$0.264649
$132.3245
1000
$0.249669
$249.669
ZTX658STZ Product Details
ZTX658STZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 5V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 500mA is essential for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
ZTX658STZ Features
the DC current gain for this device is 50 @ 100mA 5V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 10mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 50MHz
ZTX658STZ Applications
There are a lot of Diodes Incorporated ZTX658STZ applications of single BJT transistors.