SS9013GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SS9013GTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
SS9013
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
112 @ 50mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
500mA
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.042315
$0.042315
500
$0.031114
$15.557
1000
$0.025928
$25.928
2000
$0.023787
$47.574
5000
$0.022231
$111.155
10000
$0.020680
$206.8
15000
$0.020000
$300
50000
$0.019666
$983.3
SS9013GTA Product Details
SS9013GTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 112 @ 50mA 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 50mA, 500mA.Product package TO-92-3 comes from the supplier.This device displays a 20V maximum voltage - Collector Emitter Breakdown.
SS9013GTA Features
the DC current gain for this device is 112 @ 50mA 1V the vce saturation(Max) is 600mV @ 50mA, 500mA the supplier device package of TO-92-3
SS9013GTA Applications
There are a lot of ON Semiconductor SS9013GTA applications of single BJT transistors.