MJD127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJD127 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max
20W
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2V @ 16mA, 4A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
4MHz
RoHS Status
Non-RoHS Compliant
MJD127 Product Details
MJD127 Overview
DC current gain in this device equals 1000 @ 4A 4V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 16mA, 4A.The device exhibits a collector-emitter breakdown at 100V.
MJD127 Features
the DC current gain for this device is 1000 @ 4A 4V the vce saturation(Max) is 2V @ 16mA, 4A
MJD127 Applications
There are a lot of Rochester Electronics, LLC MJD127 applications of single BJT transistors.