ZTX755STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX755STZ Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-150V
Max Power Dissipation
1W
Current Rating
-1A
Base Part Number
ZTX755
Pin Count
3
Element Configuration
Single
Gain Bandwidth Product
30MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
150V
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
-150V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-1A
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX755STZ Product Details
ZTX755STZ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 1A.For high efficiency, the continuous collector voltage must be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.Maximum collector currents can be below 1A volts.
ZTX755STZ Features
the DC current gain for this device is 50 @ 500mA 5V the vce saturation(Max) is 500mV @ 200mA, 1A the emitter base voltage is kept at -5V the current rating of this device is -1A
ZTX755STZ Applications
There are a lot of Diodes Incorporated ZTX755STZ applications of single BJT transistors.