ZTX788ASTZ Overview

DC current gain in this device equals 300 @ 10mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 330mV @ 200mA, 3A.Continuous collector voltages should be kept at -3A to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.150MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

ZTX788ASTZ Features

the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 330mV @ 200mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 150MHz

ZTX788ASTZ Applications

There are a lot of Diodes Incorporated ZTX788ASTZ applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting