ZTX851STZ Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).A 5A continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.The part has a transition frequency of 130MHz.Breakdown input voltage is 60V volts.A maximum collector current of 5A volts can be achieved.

ZTX851STZ Features

the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 130MHz

ZTX851STZ Applications

There are a lot of Diodes Incorporated ZTX851STZ applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface