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2N4920G

2N4920G

2N4920G

ON Semiconductor

2N4920G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N4920G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingBulk
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation30W
Peak Reflow Temperature (Cel) 260
Current Rating-3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N4920
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation30W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA 1V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage80V
Current - Collector (Ic) (Max) 1A
Transition Frequency 3MHz
Collector Emitter Saturation Voltage600mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 11.049mm
Length 7.7216mm
Width 2.667mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7732 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.63000$0.63
10$0.55800$5.58
100$0.42800$42.8
500$0.33832$169.16

2N4920G Product Details

2N4920G Overview


This device has a DC current gain of 30 @ 500mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 3MHz.A maximum collector current of 3A volts can be achieved.

2N4920G Features


the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz

2N4920G Applications


There are a lot of ON Semiconductor 2N4920G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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