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2N5886

2N5886

2N5886

Microsemi Corporation

Bipolar Transistors - BJT Power BJT

SOT-23

2N5886 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-3
Number of Pins 3
Transistor Element Material SILICON
Published 2007
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Max Power Dissipation200W
Terminal Position BOTTOM
Terminal FormPIN/PEG
JESD-30 Code O-MBFM-P2
Number of Elements 1
Polarity NPN
Power Dissipation200W
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 25A
DC Current Gain-Min (hFE) 20
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1712 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$40.25700$4025.7

About 2N5886

The 2N5886 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - BJT Power BJT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N5886, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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