ZTX968 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX968 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Max Power Dissipation
1.2W
Peak Reflow Temperature (Cel)
260
Current Rating
-4.5A
Frequency
80MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Power - Max
1.58W
Gain Bandwidth Product
80MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 500mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 200mA, 5A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
80MHz
Collector Emitter Saturation Voltage
-50mV
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
-6V
Continuous Collector Current
-4.5A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.299920
$3.29992
10
$3.113132
$31.13132
100
$2.936917
$293.6917
500
$2.770676
$1385.338
1000
$2.613846
$2613.846
ZTX968 Product Details
ZTX968 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 500mA 1V.As it features a collector emitter saturation voltage of -50mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 5A.Continuous collector voltages should be kept at -4.5A to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.This device has a current rating of -4.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
ZTX968 Features
the DC current gain for this device is 300 @ 500mA 1V a collector emitter saturation voltage of -50mV the vce saturation(Max) is 300mV @ 200mA, 5A the emitter base voltage is kept at -6V the current rating of this device is -4.5A a transition frequency of 80MHz
ZTX968 Applications
There are a lot of Diodes Incorporated ZTX968 applications of single BJT transistors.