ZVN2110ASTOA

new-10%

Manufacturer part number:ZVN2110ASTOA

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 100V 320MA TO92-3

Case Package:SOT-23

Datasheet:ZVN2110ASTOA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	E-Line-3
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Current Rating	230mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSIP-W3
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	700mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700mW
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 25V
Current - Continuous Drain (Id) @ 25°C	320mA Ta
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	320mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.32A
Drain-source On Resistance-Max	4Ohm
Drain to Source Breakdown Voltage	100V
RoHS Status	RoHS Compliant
Lead Free	Lead Free