IRFB3307ZGPBF

new-10%

Manufacturer part number:IRFB3307ZGPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 120A TO-220AB

Case Package:SOT-23

Datasheet:IRFB3307ZGPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	5.8MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Power Dissipation	230W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	4750pF @ 50V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	64ns
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Input Capacitance	4.75nF
Drain to Source Resistance	5.8mOhm
Rds On Max	5.8 mΩ
Height	16.51mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free