IRL1004STRLPBF

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IRL1004STRLPBF

Manufacturer part number:IRL1004STRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 130A D2PAK

Case Package:SOT-23

Datasheet:IRL1004STRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	110A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.8W Ta 200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 78A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 4.5V
Rise Time	210ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	130A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.0065Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	520A
Avalanche Energy Rating (Eas)	700 mJ
Height	4.826mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	RoHS Compliant