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ZVNL110ASTOA

ZVNL110ASTOA

ZVNL110ASTOA

Diodes Incorporated

MOSFET N-CH 100V 320MA TO92-3

SOT-23

ZVNL110ASTOA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 320mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 25V
Current - Continuous Drain (Id) @ 25°C 320mA Ta
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 320mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.32A
Drain-source On Resistance-Max 4.5Ohm
Drain to Source Breakdown Voltage 100V
RoHS Status RoHS Compliant
Lead Free Lead Free

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