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ZX5T955GTA

ZX5T955GTA

ZX5T955GTA

Diodes Incorporated

ZX5T955GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZX5T955GTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -140V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 120MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZX5T955
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 360mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 140V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -360mV
Max Breakdown Voltage 140V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -4A
Height 1.7mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.418680 $0.41868
10 $0.394981 $3.94981
100 $0.372624 $37.2624
500 $0.351532 $175.766
1000 $0.331634 $331.634
ZX5T955GTA Product Details

ZX5T955GTA Overview


In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -360mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at -4A in order to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 120MHz.An input voltage of 140V volts is the breakdown voltage.Collector current can be as low as 4A volts at its maximum.

ZX5T955GTA Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 120MHz

ZX5T955GTA Applications


There are a lot of Diodes Incorporated ZX5T955GTA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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