ZX5T955GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZX5T955GTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-140V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
Frequency
120MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZX5T955
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
120MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 5V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
360mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
-360mV
Max Breakdown Voltage
140V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
-7V
Continuous Collector Current
-4A
Height
1.7mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.418680
$0.41868
10
$0.394981
$3.94981
100
$0.372624
$37.2624
500
$0.351532
$175.766
1000
$0.331634
$331.634
ZX5T955GTA Product Details
ZX5T955GTA Overview
In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -360mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at -4A in order to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 120MHz.An input voltage of 140V volts is the breakdown voltage.Collector current can be as low as 4A volts at its maximum.
ZX5T955GTA Features
the DC current gain for this device is 100 @ 1A 5V a collector emitter saturation voltage of -360mV the vce saturation(Max) is 360mV @ 300mA, 3A the emitter base voltage is kept at -7V the current rating of this device is -4A a transition frequency of 120MHz
ZX5T955GTA Applications
There are a lot of Diodes Incorporated ZX5T955GTA applications of single BJT transistors.