BUV48A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BUV48A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
125W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 8A 5V
Current - Collector Cutoff (Max)
200μA
JEDEC-95 Code
TO-218
Vce Saturation (Max) @ Ib, Ic
5V @ 2.4A, 12A
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
15A
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$2.80310
$1681.86
BUV48A Product Details
BUV48A Overview
In this device, the DC current gain is 8 @ 8A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BUV48A Features
the DC current gain for this device is 8 @ 8A 5V the vce saturation(Max) is 5V @ 2.4A, 12A
BUV48A Applications
There are a lot of Rochester Electronics, LLC BUV48A applications of single BJT transistors.