FZT653TA Overview

This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 230mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 175MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.In extreme cases, the collector current can be as low as 2A volts.

FZT653TA Features

the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz

FZT653TA Applications

There are a lot of Diodes Incorporated FZT653TA applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter