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ZXM61N02FTA

ZXM61N02FTA

ZXM61N02FTA

Diodes Incorporated

ZXM61N02FTA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXM61N02FTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 180mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.7A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 806mW
Turn On Delay Time 2.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 930mA, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 4.5V
Rise Time 4.2ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 7.8 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 700 mV
Height 1.1mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.14520 $0.4356
6,000 $0.13640 $0.8184
15,000 $0.12760 $1.914
30,000 $0.11704 $3.5112
75,000 $0.11264 $8.448
ZXM61N02FTA Product Details

ZXM61N02FTA Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 160pF @ 15V.The drain current is the maximum continuous current the device can conduct, and this device has 1.7A continuous drain current (ID).Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.When the device is turned off, a turn-off delay time of 7.8 ns occurs as the input capacitance charges before drain current conduction commences.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Using drive voltage (2.7V 4.5V), this device contributes to a reduction in overall power consumption.

ZXM61N02FTA Features


a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 7.8 ns

ZXM61N02FTA Applications


There are a lot of Diodes Incorporated ZXM61N02FTA applications of single MOSFETs transistors.

  • LCD/LED TV
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC-to-DC converters
  • AC-DC Power Supply
  • Battery Protection Circuit
  • Industrial Power Supplies
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Telecom 1 Sever Power Supplies
  • General Purpose Interfacing Switch

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