ZXM61N02FTA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXM61N02FTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
180mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Powers
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1.7A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
625mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
806mW
Turn On Delay Time
2.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 930mA, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
160pF @ 15V
Current - Continuous Drain (Id) @ 25°C
1.7A Ta
Gate Charge (Qg) (Max) @ Vgs
3.4nC @ 4.5V
Rise Time
4.2ns
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
4.2 ns
Turn-Off Delay Time
7.8 ns
Continuous Drain Current (ID)
1.7A
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
700 mV
Height
1.1mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
ZXM61N02FTA Product Details
ZXM61N02FTA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 160pF @ 15V.The drain current is the maximum continuous current the device can conduct, and this device has 1.7A continuous drain current (ID).Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.When the device is turned off, a turn-off delay time of 7.8 ns occurs as the input capacitance charges before drain current conduction commences.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Using drive voltage (2.7V 4.5V), this device contributes to a reduction in overall power consumption.
ZXM61N02FTA Features
a continuous drain current (ID) of 1.7A a drain-to-source breakdown voltage of 20V voltage the turn-off delay time is 7.8 ns
ZXM61N02FTA Applications
There are a lot of Diodes Incorporated ZXM61N02FTA applications of single MOSFETs transistors.
LCD/LED TV
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC-to-DC converters
AC-DC Power Supply
Battery Protection Circuit
Industrial Power Supplies
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,