ZXM61P03FTC

new-10%

Manufacturer part number:ZXM61P03FTC

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 30V 1.1A SOT23-3

Case Package:SOT-23

Datasheet:ZXM61P03FTC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-1.1A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	625mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
Turn On Delay Time	1.9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.1A Ta
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 10V
Rise Time	2.9ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.9 ns
Turn-Off Delay Time	8.9 ns
Continuous Drain Current (ID)	1.1A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.35Ohm
Drain to Source Breakdown Voltage	-30V
Height	1.02mm
Length	3.04mm
Width	1.4mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free