ZXM64N02XTA

new-10%

Manufacturer part number:ZXM64N02XTA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 20V 5.4A 8-Pin MSOP T/R

Case Package:SOT-23

Datasheet:ZXM64N02XTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins	8
Weight	139.989945mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	5.4A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Turn On Delay Time	5.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.4A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Rise Time	9.6ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	9.6 ns
Turn-Off Delay Time	28.3 ns
Continuous Drain Current (ID)	5.4A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Height	950μm
Length	3.1mm
Width	3.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free