AUIRLU024Z

new-10%

Manufacturer part number:AUIRLU024Z

Manufacturer:Infineon Technologies

Description:MOSFET N CH 55V 16A SOT 223

Case Package:SOT-23

Datasheet:AUIRLU024Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	35W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	58m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	9.9nC @ 5V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.058Ohm
Pulsed Drain Current-Max (IDM)	64A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	25 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free