ZVP2106ASTOA

new-10%

Manufacturer part number:ZVP2106ASTOA

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 60V 0.28A TO92-3

Case Package:SOT-23

Datasheet:ZVP2106ASTOA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	E-Line-3
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	5Ohm
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	260
Current Rating	-280mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSIP-W3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	700mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700mW
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 18V
Current - Continuous Drain (Id) @ 25°C	280mA Ta
Rise Time	15ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	280mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.28A
Drain to Source Breakdown Voltage	-60V
Height	4.01mm
Length	4.77mm
Width	2.41mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free