ZXMHC6A07N8TC

new-10%

Manufacturer part number:ZXMHC6A07N8TC

Manufacturer:Diodes Incorporated

Description:MOSFET 2N/2P-CH 60V 8-SOIC

Case Package:SOT-23

Datasheet:ZXMHC6A07N8TC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	870mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	ZXMHC6A07
Pin Count	8
Number of Elements	4
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.36W
Turn On Delay Time	1.6 ns
FET Type	2 N and 2 P-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	166pF @ 40V
Current - Continuous Drain (Id) @ 25°C	1.39A 1.28A
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 10V
Rise Time	2.3ns
Drain to Source Voltage (Vdss)	60V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	5.8 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	1.28A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1.39A
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	-60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free