STS4DNF60L

new-10%

Manufacturer part number:STS4DNF60L

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 60V 4A 8-Pin SO N T/R

Case Package:SOT-23

Datasheet:STS4DNF60L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	STripFET™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	55mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	4A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS4D
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	15 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1030pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	28ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	4A
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	15V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	16A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.25mm
Length	5mm
Width	4.05mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free