ZXMN10A08DN8TA

new-10%

Manufacturer part number:ZXMN10A08DN8TA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R

Case Package:SOT-23

Datasheet:ZXMN10A08DN8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	250mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Max Power Dissipation	1.8W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	2.1A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Turn On Delay Time	3.4 ns
Power - Max	1.25W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 50V
Current - Continuous Drain (Id) @ 25°C	1.6A
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 10V
Rise Time	2.2ns
Fall Time (Typ)	2.2 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	2.1A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	9A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free