NTHD3100CT1G

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Manufacturer part number:NTHD3100CT1G

Manufacturer:ON Semiconductor

Description:NTHD3100CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTHD3100CT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 hours ago)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Number of Pins	8
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	20V
Max Power Dissipation	1.1W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	2.9A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTHD3100C
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	6.3 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	165pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.9A 3.2A
Gate Charge (Qg) (Max) @ Vgs	2.3nC @ 4.5V
Rise Time	11.7ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	11.7 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	3.9A
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.05mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free