APTM50HM75STG

new-10%

Manufacturer part number:APTM50HM75STG

Manufacturer:Microsemi Corporation

Description:MOSFET 4N-CH 500V 46A SP4

Case Package:SOT-23

Datasheet:APTM50HM75STG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	14
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	357W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	14
Number of Elements	4
Operating Mode	ENHANCEMENT MODE
Power Dissipation	357W
Case Connection	ISOLATED
Turn On Delay Time	18 ns
FET Type	4 N-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 23A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	5600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	123nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	500V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	87 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.09Ohm
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	2500 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Radiation Hardening	No
RoHS Status	RoHS Compliant