ZXMN2A01FTA

new-10%

ZXMN2A01FTA

Manufacturer part number:ZXMN2A01FTA

Manufacturer:Diodes Incorporated

Description:ZXMN2A01 Series 20 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

Case Package:SOT-23

Datasheet:ZXMN2A01FTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	120mOhm
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	2.09A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	625mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
Turn On Delay Time	2.49 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	303pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.9A Ta
Gate Charge (Qg) (Max) @ Vgs	3nC @ 4.5V
Rise Time	5.21ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	5.21 ns
Turn-Off Delay Time	7.47 ns
Continuous Drain Current (ID)	2.2A
Threshold Voltage	700mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free