ZXMP10A18KTC

new-10%

Manufacturer part number:ZXMP10A18KTC

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 100V 3.8A DPAK

Case Package:SOT-23

Datasheet:ZXMP10A18KTC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	150mOhm
Additional Feature	LOW THRESHOLD
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.17W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.3W
Case Connection	DRAIN
Turn On Delay Time	4.9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1055pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	26.9nC @ 10V
Rise Time	6.8ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	17.9 ns
Turn-Off Delay Time	33.9 ns
Continuous Drain Current (ID)	5.9A
Threshold Voltage	-4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free