Welcome to Hotenda.com Online Store!

logo
userjoin
Home

RU1E002SPTCL

RU1E002SPTCL

RU1E002SPTCL

ROHM Semiconductor

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 1.4 Ω @ 250mA, 10V ±20V 30pF @ 10V 30V SC-85

SOT-23

RU1E002SPTCL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-85
Number of Pins 85
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 200mW Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 10V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 250mA
Drain Current-Max (Abs) (ID) 0.25A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.107177 $0.107177
10 $0.101110 $1.0111
100 $0.095388 $9.5388
500 $0.089988 $44.994
1000 $0.084894 $84.894
RU1E002SPTCL Product Details

RU1E002SPTCL Overview


A device's maximal input capacitance is 30pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 250mA, which represents the maximum continuous current it can conduct.In this device, the drain current is 0.25A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 10V).

RU1E002SPTCL Features


a continuous drain current (ID) of 250mA
a 30V drain to source voltage (Vdss)


RU1E002SPTCL Applications


There are a lot of ROHM Semiconductor
RU1E002SPTCL applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News