ZXMN6A11ZTA

new-10%

Manufacturer part number:ZXMN6A11ZTA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 60V 3.6A Automotive 4-Pin(3+Tab) SOT-89 T/R

Case Package:SOT-23

Datasheet:ZXMN6A11ZTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-243AA
Number of Pins	3
Weight	130.492855mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	120mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	2.8A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.6W
Case Connection	DRAIN
Turn On Delay Time	1.95 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 40V
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	5.7nC @ 10V
Rise Time	3.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.6 ns
Turn-Off Delay Time	8.2 ns
Continuous Drain Current (ID)	3.6A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2.4A
Drain to Source Breakdown Voltage	60V
Height	1.6mm
Length	4.6mm
Width	2.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free