NVB60N06T4G

new-10%

Manufacturer part number:NVB60N06T4G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:NVB60N06T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	2.4W Ta 150W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	25.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3220pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Ta
Gate Charge (Qg) (Max) @ Vgs	81nC @ 10V
Rise Time	180.7ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	142.5 ns
Turn-Off Delay Time	94.5 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.014Ohm
Pulsed Drain Current-Max (IDM)	180A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	454 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free