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IPP020N08N5AKSA1

IPP020N08N5AKSA1

IPP020N08N5AKSA1

Infineon Technologies

N-Channel Tube 2m Ω @ 100A, 10V ±20V 16900pF @ 40V 223nC @ 10V TO-220-3

SOT-23

IPP020N08N5AKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 280μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 16900pF @ 40V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 223nC @ 10V
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 102 ns
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.002Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.67000 $6.67
10 $5.99500 $59.95
100 $4.98580 $498.58
500 $4.11102 $2055.51
1,000 $3.52782 $3.52782
IPP020N08N5AKSA1 Product Details

IPP020N08N5AKSA1 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 16900pF @ 40V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 80V and VGS=80V, so the drain-source breakdown voltage is 80V in this case.It is [102 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 480A.A turn-on delay time of 40 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 80V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).

IPP020N08N5AKSA1 Features


a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 102 ns
based on its rated peak drain current 480A.


IPP020N08N5AKSA1 Applications


There are a lot of Infineon Technologies
IPP020N08N5AKSA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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