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SI1433DH-T1-GE3

SI1433DH-T1-GE3

SI1433DH-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 1.9A SC70-6

SOT-23

SI1433DH-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 950mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 100μA
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time 17ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 1.9A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.15Ohm
DS Breakdown Voltage-Min 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant

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