ZXT10P12DE6TA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.With a collector emitter saturation voltage of -195mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at -3A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.110MHz is present in the transition frequency.A breakdown input voltage of 12V volts can be used.When collector current reaches its maximum, it can reach 3A volts.

ZXT10P12DE6TA Features

the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -195mV
the vce saturation(Max) is 300mV @ 50mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 110MHz

ZXT10P12DE6TA Applications

There are a lot of Diodes Incorporated ZXT10P12DE6TA applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface