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MMBT5551LT3G

MMBT5551LT3G

MMBT5551LT3G

ON Semiconductor

MMBT5551LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5551LT3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 160V
Max Power Dissipation225mW
Terminal Position DUAL
Terminal FormGULL WING
Current Rating600mA
Base Part Number MMBT5551
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300mW
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage160V
Collector Emitter Saturation Voltage150mV
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
VCEsat-Max 0.2 V
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:30178 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.040474$0.040474
500$0.029760$14.88
1000$0.024800$24.8
2000$0.022752$45.504
5000$0.021264$106.32
10000$0.019780$197.8
15000$0.019130$286.95
50000$0.018810$940.5

MMBT5551LT3G Product Details

MMBT5551LT3G Description


The MMBT5551LT3G is a High Voltage Transistor with NPN Silicon. A transistor is a tiny semiconductor that regulates or controls the flow of current or voltage in addition to generating, amplifying, and functioning as a switch or gate for these electrical signals. Three layers, or terminals, of semiconductor material, typically make up transistors. Each of these layers is capable of carrying a current.



MMBT5551LT3G Features


  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

  • High voltage

  • High current

  • Good switching characteristics



MMBT5551LT3G Applications


  • As a switch

  • As an amplifier

  • Amplifying

  • Controlling

  • Generating electrical signals


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