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MMBT5551LT3G

  • MMBT5551LT3G
  • MMBT5551LT3G

MMBT5551LT3G

MMBT5551LT3G

ON Semiconductor

MMBT5551LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5551LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 160V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 600mA
Base Part Number MMBT5551
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 150mV
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
VCEsat-Max 0.2 V
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.040474 $0.040474
500 $0.029760 $14.88
1000 $0.024800 $24.8
2000 $0.022752 $45.504
5000 $0.021264 $106.32
10000 $0.019780 $197.8
15000 $0.019130 $286.95
50000 $0.018810 $940.5
MMBT5551LT3G Product Details

MMBT5551LT3G Description


The MMBT5551LT3G is a High Voltage Transistor with NPN Silicon. A transistor is a tiny semiconductor that regulates or controls the flow of current or voltage in addition to generating, amplifying, and functioning as a switch or gate for these electrical signals. Three layers, or terminals, of semiconductor material, typically make up transistors. Each of these layers is capable of carrying a current.



MMBT5551LT3G Features


  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

  • High voltage

  • High current

  • Good switching characteristics



MMBT5551LT3G Applications


  • As a switch

  • As an amplifier

  • Amplifying

  • Controlling

  • Generating electrical signals


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