ZXT2M322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXT2M322TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerSMD, Flat Leads
Number of Pins
322
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
3W
Terminal Position
QUAD
Peak Reflow Temperature (Cel)
260
Current Rating
-3.5A
Frequency
180MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXT2M322
Pin Count
5
JESD-30 Code
S-PQFP-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 2A 2V
Current - Collector Cutoff (Max)
25nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 350mA, 3.5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
-240mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
-25V
Emitter Base Voltage (VEBO)
7.5V
Continuous Collector Current
-3.5A
Height
1mm
Length
2mm
Width
2mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.071046
$0.071046
500
$0.052240
$26.12
1000
$0.043533
$43.533
2000
$0.039939
$79.878
5000
$0.037326
$186.63
10000
$0.034722
$347.22
15000
$0.033580
$503.7
50000
$0.033019
$1650.95
ZXT2M322TA Product Details
ZXT2M322TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 2A 2V.With a collector emitter saturation voltage of -240mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 350mA, 3.5A.Maintaining the continuous collector voltage at -3.5A is essential for high efficiency.With the emitter base voltage set at 7.5V, an efficient operation can be achieved.This device has a current rating of -3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 20V volts.A maximum collector current of 3.5A volts can be achieved.
ZXT2M322TA Features
the DC current gain for this device is 150 @ 2A 2V a collector emitter saturation voltage of -240mV the vce saturation(Max) is 300mV @ 350mA, 3.5A the emitter base voltage is kept at 7.5V the current rating of this device is -3.5A a transition frequency of 180MHz
ZXT2M322TA Applications
There are a lot of Diodes Incorporated ZXT2M322TA applications of single BJT transistors.