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ZXT2M322TA

ZXT2M322TA

ZXT2M322TA

Diodes Incorporated

ZXT2M322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT2M322TA Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerSMD, Flat Leads
Number of Pins 322
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 3W
Terminal Position QUAD
Peak Reflow Temperature (Cel) 260
Current Rating -3.5A
Frequency 180MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT2M322
Pin Count 5
JESD-30 Code S-PQFP-F3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A 2V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 350mA, 3.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 180MHz
Collector Emitter Saturation Voltage -240mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) -25V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -3.5A
Height 1mm
Length 2mm
Width 2mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.071046 $0.071046
500 $0.052240 $26.12
1000 $0.043533 $43.533
2000 $0.039939 $79.878
5000 $0.037326 $186.63
10000 $0.034722 $347.22
15000 $0.033580 $503.7
50000 $0.033019 $1650.95
ZXT2M322TA Product Details

ZXT2M322TA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 2A 2V.With a collector emitter saturation voltage of -240mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 350mA, 3.5A.Maintaining the continuous collector voltage at -3.5A is essential for high efficiency.With the emitter base voltage set at 7.5V, an efficient operation can be achieved.This device has a current rating of -3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 20V volts.A maximum collector current of 3.5A volts can be achieved.

ZXT2M322TA Features


the DC current gain for this device is 150 @ 2A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 350mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3.5A
a transition frequency of 180MHz

ZXT2M322TA Applications


There are a lot of Diodes Incorporated ZXT2M322TA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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