ZXT953KTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXT953KTC Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.39037mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-100V
Max Power Dissipation
4.2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXT953
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
4.2W
Transistor Application
SWITCHING
Gain Bandwidth Product
125MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
390mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 1V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
390mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
-335mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
-7V
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.691120
$0.69112
10
$0.652000
$6.52
100
$0.615094
$61.5094
500
$0.580278
$290.139
1000
$0.547432
$547.432
ZXT953KTC Product Details
ZXT953KTC Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 1V.A collector emitter saturation voltage of -335mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at -7V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.The part has a transition frequency of 125MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 5A volts is possible.
ZXT953KTC Features
the DC current gain for this device is 100 @ 1A 1V a collector emitter saturation voltage of -335mV the vce saturation(Max) is 390mV @ 500mA, 5A the emitter base voltage is kept at -7V the current rating of this device is -5A a transition frequency of 125MHz
ZXT953KTC Applications
There are a lot of Diodes Incorporated ZXT953KTC applications of single BJT transistors.