ZXTN07012EFFTA Overview

This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 320mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 220MHz.An input voltage of 12V volts is the breakdown voltage.A maximum collector current of 4.5A volts is possible.

ZXTN07012EFFTA Features

the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz

ZXTN07012EFFTA Applications

There are a lot of Diodes Incorporated ZXTN07012EFFTA applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface