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FMMTA42TA

FMMTA42TA

FMMTA42TA

Diodes Incorporated

FMMTA42TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMTA42TA Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMTA42
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 330mW
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Continuous Collector Current 200mA
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.46000 $0.46
500 $0.4554 $227.7
1000 $0.4508 $450.8
1500 $0.4462 $669.3
2000 $0.4416 $883.2
2500 $0.437 $1092.5
FMMTA42TA Product Details

FMMTA42TA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 30mA 10V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.There is a transition frequency of 50MHz in the part.A breakdown input voltage of 300V volts can be used.A maximum collector current of 200mA volts is possible.

FMMTA42TA Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 50MHz

FMMTA42TA Applications


There are a lot of Diodes Incorporated FMMTA42TA applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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