FMMTA42TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMTA42TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
300V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMTA42
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
330mW
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Continuous Collector Current
200mA
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.46000
$0.46
500
$0.4554
$227.7
1000
$0.4508
$450.8
1500
$0.4462
$669.3
2000
$0.4416
$883.2
2500
$0.437
$1092.5
FMMTA42TA Product Details
FMMTA42TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 30mA 10V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.There is a transition frequency of 50MHz in the part.A breakdown input voltage of 300V volts can be used.A maximum collector current of 200mA volts is possible.
FMMTA42TA Features
the DC current gain for this device is 40 @ 30mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 5V the current rating of this device is 200mA a transition frequency of 50MHz
FMMTA42TA Applications
There are a lot of Diodes Incorporated FMMTA42TA applications of single BJT transistors.