PBSS303PZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS303PZ,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
45.359237g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
130MHz
Base Part Number
PBSS303P
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
700mW
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
5.3A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
265mV @ 265mA, 5.3A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
130MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
250
Turn Off Time-Max (toff)
320ns
Turn On Time-Max (ton)
70ns
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.048200
$1.0482
10
$0.988868
$9.88868
100
$0.932894
$93.2894
500
$0.880089
$440.0445
1000
$0.830273
$830.273
PBSS303PZ,135 Product Details
PBSS303PZ,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 1A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 265mV @ 265mA, 5.3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 130MHz.The breakdown input voltage is 30V volts.A maximum collector current of 5.3A volts can be achieved.
PBSS303PZ,135 Features
the DC current gain for this device is 250 @ 1A 2V the vce saturation(Max) is 265mV @ 265mA, 5.3A the emitter base voltage is kept at 5V a transition frequency of 130MHz
PBSS303PZ,135 Applications
There are a lot of Nexperia USA Inc. PBSS303PZ,135 applications of single BJT transistors.