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PBSS303PZ,135

PBSS303PZ,135

PBSS303PZ,135

Nexperia USA Inc.

PBSS303PZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS303PZ,135 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 45.359237g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 130MHz
Base Part Number PBSS303P
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 700mW
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 5.3A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 265mV @ 265mA, 5.3A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 130MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
Turn Off Time-Max (toff) 320ns
Turn On Time-Max (ton) 70ns
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.048200 $1.0482
10 $0.988868 $9.88868
100 $0.932894 $93.2894
500 $0.880089 $440.0445
1000 $0.830273 $830.273
PBSS303PZ,135 Product Details

PBSS303PZ,135 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 1A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 265mV @ 265mA, 5.3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 130MHz.The breakdown input voltage is 30V volts.A maximum collector current of 5.3A volts can be achieved.

PBSS303PZ,135 Features


the DC current gain for this device is 250 @ 1A 2V
the vce saturation(Max) is 265mV @ 265mA, 5.3A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS303PZ,135 Applications


There are a lot of Nexperia USA Inc. PBSS303PZ,135 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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