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ZXTN10150DZTA

  • ZXTN10150DZTA
  • ZXTN10150DZTA

ZXTN10150DZTA

ZXTN10150DZTA

Diodes Incorporated

ZXTN10150DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN10150DZTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 135MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1.5W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 250mV
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 1A
Transition Frequency 135MHz
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.329040 $0.32904
10 $0.310415 $3.10415
100 $0.292844 $29.2844
500 $0.276268 $138.134
1000 $0.260630 $260.63
ZXTN10150DZTA Product Details

ZXTN10150DZTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 250mV.With the emitter base voltage set at 7V, an efficient operation can be achieved.A transition frequency of 135MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

ZXTN10150DZTA Features


the DC current gain for this device is 100 @ 150mA 250mV
the emitter base voltage is kept at 7V
a transition frequency of 135MHz

ZXTN10150DZTA Applications


There are a lot of Diodes Incorporated ZXTN10150DZTA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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