BC857T,115

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Manufacturer part number:BC857T,115

Manufacturer:NXP USA Inc.

Description:BC857T,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:BC857T,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SC-75
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Base Part Number	BC857
Power - Max	150mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	125 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	100MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.02000	$0.02
500	$0.0198	$9.9
1000	$0.0196	$19.6
1500	$0.0194	$29.1
2000	$0.0192	$38.4
2500	$0.019	$47.5

BC857T,115 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier device package SC-75 comes with the product.The device exhibits a collector-emitter breakdown at 45V.