FJV42MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJV42MTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
Other Transistors
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
50MHz
Base Part Number
FJV42
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
350V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
6V
hFE Min
25
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.07415
$0.22245
6,000
$0.06482
$0.38892
15,000
$0.05550
$0.8325
30,000
$0.05239
$1.5717
75,000
$0.04928
$3.696
150,000
$0.04410
$6.615
FJV42MTF Product Details
FJV42MTF Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.There is a breakdown input voltage of 350V volts that it can take.Maximum collector currents can be below 500mA volts.
FJV42MTF Features
the DC current gain for this device is 40 @ 30mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 6V a transition frequency of 50MHz
FJV42MTF Applications
There are a lot of ON Semiconductor FJV42MTF applications of single BJT transistors.